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| Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm 15.00.3 11.00.2 5.00.2 3.2 s Features q q q q 16.20.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 160 140 5 15 8 100 3 150 -55 to +150 Unit V V V A A W 0.7 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) Internal Connection C B C C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = -7mA, VCC = 50V 20 2.0 6.0 1.2 140 2000 5000 30000 2.5 3.0 V V MHz s s s min typ max 100 100 100 Unit A A A V Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 1 Power Transistors PC -- Ta 120 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) (1) IB=2mA 10 TC=25C 2SD1895 IC -- VCE 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W) 100 30 Collector current IC (A) 80 8 1mA 0.9mA 0.8mA 0.7mA 10 60 6 0.6mA 0.5mA 0.4mA 0.3mA 3 TC=-25C 1 25C 0.3 100C 40 4 20 (2) (3) 2 0.2mA 0 80 100 120 140 160 0 2 4 6 8 10 12 0 0 20 40 60 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 105 hFE -- IC 1000 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz 30 Forward current transfer ratio hFE 300 104 TC=100C 103 25C 102 10 100 3 TC=100C 25C -25C 30 1 10 -25C 0.3 3 0.1 0.1 0.3 1 3 10 30 100 10 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=-IB2) VCC=50V TC=25C tstg ton tf Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 10 IC 3 10ms 1 0.3 0.1 0.03 0.01 DC t=1ms 4 8 12 16 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD1895 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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